vishay siliconix SIE860DF new product document number: 68786 s-82582-rev. a, 27-oct-08 www.vishay.com 1 n-channel 30-v (d-s) mosfet features ? trenchfet ? gen iii power mosfet ? ultra low thermal resistance using top-exposed polarpak ? package for double-sided cooling ? leadframe-based new encapsulated package - die not exposed - same layout regardless of die size ? low q gd /q gs ratio helps prevent shoot-through ? 100 % r g and uis tested applications ? vrm, pol ? dc/dc conversion ? synchronous rectification ? server product summary v ds (v) r ds(on) ( ) e i d (a) q g (typ.) silicon limit package limit 30 0.0021 at v gs = 10 v 178 60 a 34 nc 0.0028 at v gs = 4.5 v 154 60 a package drawing http://www.vishay.com/doc?68796 orderin g information: sie 8 60df-t1-e3 (lead (p b )-free) to p v ie w bottom v ie w top s u rface is connected to pins 1, 5, 6, and 10 p o l ar pak 10 d s s g d d s s g d 1 432 5 67 8 9 d dsg d 5 4 3 2 1 6 7 8 9 10 for related documents http://www.vishay.com/ppg?68786 n -channel mosfet g d s notes: a. package limited at 60 a. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( http://www.vishay.com/ppg?73257 ). the polarpak is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation pr ocess in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sold ering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 178 (silicon limit) a 60 a (package limit) t c = 70 c 60 a t a = 25 c 38 b, c t a = 70 c 31 b, c pulsed drain current i dm 80 continuous source-drain diode current t c = 25 c i s 60 a t a = 25 c 4.3 b, c single pulse avalanche current l = 0.1 mh i as 50 avalanche energy e as 125 mj maximum power dissipation t c = 25 c p d 104 w t c = 70 c 66 t a = 25 c 5.2 b, c t a = 70 c 3.3 b, c operating junction and storage temperature range t j , t stg - 50 to 150 c soldering recommendations (peak temperature) d, e 260 rohs compliant
www.vishay.com 2 document number: 68786 s-82582-rev. a, 27-oct-08 vishay siliconix SIE860DF new product notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady stat e conditions is 68 c/w. c. measured at source pin ( on the side of the package). notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b t 10 s r thja 20 24 c/w maximum junction-to-case (drain top) steady state r thjc (drain) 0.9 1.1 maximum junction-to-case (source) a, c r thjc (source) 2.7 3.3 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 30 mv/c v gs(th) temperature coefficient v gs(th) /t j - 6.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 25 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 21.7 a 0.0017 0.0021 v gs = 4 .5 v, i d = 19 a 0.0023 0.0028 forward transconductance a g fs v ds = 15 v, i d = 21.7 a 110 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 4500 pf output capacitance c oss 850 reverse transfer capacitance c rss 300 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 20 a 70 105 nc v ds = 15 v, v gs = 4.5 v, i d = 20 a 34 51 gate-source charge q gs 14 gate-drain charge q gd 9 gate resistance r g f = 1 mhz 0.9 1.8 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 4.5 v, r g = 1 35 55 ns rise time t r 20 30 turn-off delay time t d(off) 50 75 fall time t f 30 45 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 16 25 rise time t r 10 15 turn-off delay time t d(off) 40 30 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 60 a pulse diode forward current a i sm 80 body diode voltage v sd i s = 10 a 0.8 1.2 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 35 55 ns body diode reverse recovery charge q rr 30 45 nc reverse recovery fall time t a 21 ns reverse recovery rise time t b 14
document number: 68786 s-82582-rev. a, 27-oct-08 www.vishay.com 3 vishay siliconix SIE860DF new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 20 40 60 8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10thr u 4 v v gs =3 v v gs =2 v 0.0010 0.0014 0.001 8 0.0022 0.0026 0.0030 0204060 8 0 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =4.5 v v gs =10 v 0 2 4 6 8 10 0204060 8 0 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =24 v v ds =15 v i d =20a transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss c rss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs =10 v v gs =4.5 v i d =21.7a
www.vishay.com 4 document number: 68786 s-82582-rev. a, 27-oct-08 vishay siliconix SIE860DF new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 10 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 100 t j = 150 c t j =25 c 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.001 0.002 0.003 0.004 0.005 0.006 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j =25 c t j = 125 c i d =21.7a 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 time (s) po w er ( w ) safe operating area, junction-to-ambient - drain c u rrent (a) i d v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 0.01 100 1 100 0.01 0.1 1ms 10 ms 100 ms 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * 1 s 10 s b v dss limited dc
document number: 68786 s-82582-rev. a, 27-oct-08 www.vishay.com 5 vishay siliconix SIE860DF new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* t c - case temperat u re (c) i d - drain c u rrent (a) 0 40 8 0 120 160 200 0 255075100125150 package limited power derating, junction-to-case 0 30 60 90 120 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 68786 s-82582-rev. a, 27-oct-08 vishay siliconix SIE860DF new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68786 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 55 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case (drain top) 1 0.1 0.01 0.2 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance single p u lse 0.1 10 -3 10 -2 1 10 -1 10 -4 0.02 0.05 normalized thermal transient impedance, junction-to-source 10 -3 10 -2 0 0 1 0 1 1 10 -1 10 -4 0.2 0.1 0.05 0.02 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 d u ty cycle = 0.5 single p u lse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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